| 1 |
Design guidelines for GaSb/InAs TFET exploiting strain and device size
Visciarelli M, Gnani E, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 129, 157, 2017 |
| 2 |
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
Cao J, Cresti A, Esseni D, Pala M
Solid-State Electronics, 116, 1, 2016 |
| 3 |
Capacitance estimation for In As Tunnel FETs by means of full-quantum k . p simulation
Gnani E, Baravelli E, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 108, 104, 2015 |
| 4 |
Quantum simulation of an ultrathin body field-effect transistor with channel imperfections
Vyurkov V, Semenikhin I, Filippov S, Orlikovsky A
Solid-State Electronics, 70, 106, 2012 |
| 5 |
Surface-Modified Low-Temperature Solid Oxide Fuel Cell
Kim YB, Holme TP, Gur TM, Prinz FB
Advanced Functional Materials, 21(24), 4684, 2011 |
| 6 |
Electronic and atomic structure computation of disordered low index surfaces of gamma-alumina
Dyan A, Azevedo C, Cenedese P, Dubot P
Applied Surface Science, 254(13), 3819, 2008 |
| 7 |
Variation in charge-transfer photochemistry clarified by a CASSCF/MR-CCI comparative study of the low-lying excited states of M(R)(CO)(3)(H-DAB) (M = Mn, R = H, methyl, ethyl, M = Re, R = H, DAB = 1,4-diaza-1,3-butadiene)
Guillaumont D, Wilms MP, Daniel C, Stufkens DJ
Inorganic Chemistry, 37(22), 5816, 1998 |
| 8 |
Solvation dynamics of an excess electron in methanol and water
Mosyak AA, Prezhdo OV, Rossky PJ
Journal of Chemical Physics, 109(15), 6390, 1998 |
| 9 |
Anisotropy of pump-probe absorption of the hydrated electron : A statistical model
Bratos S, Leicknam JC
Journal of Chemical Physics, 109(22), 9950, 1998 |
| 10 |
Wave packet dynamics in ultrafast spectroscopy of the hydrated electron
Kummrow A, Emde MF, Baltuska A, Pshenichnikov MS, Wiersma DA
Journal of Physical Chemistry A, 102(23), 4172, 1998 |
