화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance
Pulfrey DL, Chen L
Solid-State Electronics, 53(9), 935, 2009
2 Examination of the high-frequency capability of carbon nanotube FETs
Pulfrey DL, Chen L
Solid-State Electronics, 52(9), 1324, 2008
3 Switching-speed calculations for Schott ky-barrier carbon nanotube field-effect transistors
John DL, Pulfrey DL
Journal of Vacuum Science & Technology A, 24(3), 708, 2006
4 Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes
Pulfrey DL, Parish G, Wee D, Nener BD
Solid-State Electronics, 49(12), 1969, 2005
5 Application of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors
Pulfrey DL, Fathpour S, St Denis A, Vaidyanathan M, Hagley WA, Surridge RK
Journal of Vacuum Science & Technology A, 18(2), 775, 2000