검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer Garcia-Hernansanz R, Garcia-Hemme E, Montero D, Olea J, del Prado A, Martil I, Voz C, Gerling LG, Puigdollers J, Alcubilla R Solar Energy Materials and Solar Cells, 185, 61, 2018 |
| 2 |
Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells Almora O, Gerling LG, Voz C, Alcubilla R, Puigdollers J, Garcia-Belmonte G Solar Energy Materials and Solar Cells, 168, 221, 2017 |
| 3 |
Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells Gerling LG, Mahato S, Morales-Vilches A, Masmitja G, Ortega P, Voz C, Alcubilla R, Puigdollers J Solar Energy Materials and Solar Cells, 145, 109, 2016 |
| 4 |
Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis Orpella A, Martin I, Lopez-Gonzalez JM, Ortega P, Munoz J, Sinde DC, Voz C, Puigdollers J, Alcubilla R Solar Energy Materials and Solar Cells, 141, 350, 2015 |
| 5 |
Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors Marsal A, Carreras P, Puigdollers J, Voz C, Galindo S, Alcubilla R, Bertomeu J, Antony A Thin Solid Films, 555, 107, 2014 |
| 6 |
Simulation of organic inverter Papadopoulos NP, Marsal A, Picos R, Puigdollers J, Hatzopoulos AA Solid-State Electronics, 68, 18, 2012 |
| 7 |
N-type PTCDI-C13H27 thin-film transistors deposited at different substrate temperature Puigdollers J, Della Pirriera M, Marsal A, Orpella A, Cheylan S, Voz C, Alcubilla R Thin Solid Films, 517(23), 6271, 2009 |
| 8 |
Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination Mora-Sero I, Luo Y, Garcia-Belmonte G, Bisquert J, Munoz D, Voz C, Puigdollers J, Alcubilla R Solar Energy Materials and Solar Cells, 92(4), 505, 2008 |
| 9 |
Progress in a-Si : H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 degrees C Munoz D, Voz C, Martin I, Orpella A, Puigdollers J, Alcubilla R, Villar F, Bertomeu J, Andreu J, Damon-Lacoste J, Cabarrocas PRI Thin Solid Films, 516(5), 761, 2008 |
| 10 |
Fullerene thin-film transistors fabricated on polymeric gate dielectric Puigdollers J, Voz C, Cheylan S, Orpella A, Vetter M, Alcubilla R Thin Solid Films, 515(19), 7667, 2007 |