검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
n-GaAs/InGaP/p-GaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion Gutsche C, Lysov A, Braam D, Regolin I, Keller G, Li ZA, Geller M, Spasova M, Prost W, Tegude FJ Advanced Functional Materials, 22(5), 929, 2012 |
| 2 |
Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor-liquid-solid grown GaAs nanowires Regolin I, Gutsche C, Lysov A, Blekker K, Li ZA, Spasova M, Prost W, Tegude FJ Journal of Crystal Growth, 315(1), 143, 2011 |
| 3 |
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination Jin Z, Liu X, Prost W, Tegude FJ Solid-State Electronics, 52(7), 1088, 2008 |
| 4 |
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs Regolin I, Sudfeld D, Luttjohann S, Khorenko V, Prost W, Kastner J, Dumpich G, Meier C, Lorke A, Tegude FJ Journal of Crystal Growth, 298, 607, 2007 |
| 5 |
Passivation of InP-based HBTs Jin Z, Uchida K, Nozaki S, Prost W, Tegude FJ Applied Surface Science, 252(21), 7664, 2006 |
| 6 |
Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx Jin Z, Neumann S, Prost W, Tegude F Solid-State Electronics, 49(3), 409, 2005 |
| 7 |
Growth and characterization of InAlP/InGaAs double barrier RTDs Neumann S, Velling P, Prost W, Tegude FJ Journal of Crystal Growth, 272(1-4), 555, 2004 |
| 8 |
Sulfur and low-temperature SiNx passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors Jin Z, Prost W, Neumann S, Tegude FJ Journal of Vacuum Science & Technology B, 22(3), 1060, 2004 |
| 9 |
Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base Jin Z, Otten F, Reimann T, Neumann S, Prost W, Tegude FJ Solid-State Electronics, 48(9), 1637, 2004 |
| 10 |
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources Neumann S, Prost W, Tegude FJ Journal of Crystal Growth, 248, 130, 2003 |