화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen C, Burenkov A, Pichler P, Lorenz J
Solid-State Electronics, 65-66, 114, 2011
2 Alpha-particle-induced SER of embedded SRAMs affected by variations in process parameters and by the use of process options
Heijmen T, Kruseman B
Solid-State Electronics, 49(11), 1783, 2005
3 Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells
Cho CYS, Chen MJ
Solid-State Electronics, 48(7), 1189, 2004