검색결과 : 46건
| No. | Article |
|---|---|
| 1 |
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 512, 78, 2019 |
| 2 |
Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE Dinh DV, Amano H, Pristovsek M Journal of Crystal Growth, 512, 100, 2019 |
| 3 |
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Liu ZB, Nitta S, Usami S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 509, 50, 2019 |
| 4 |
Morphological study of InGaN on GaN substrate by supersaturation Liu ZB, Nitta S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 508, 58, 2019 |
| 5 |
How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Hu N, Dinh DV, Pristovsek M, Honda Y, Amano H Journal of Crystal Growth, 507, 205, 2019 |
| 6 |
Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth Ye Z, Nitta S, Nagamatsu K, Fujimoto N, Kushimoto M, Deki M, Tanaka A, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 516, 63, 2019 |
| 7 |
Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019) Liu ZB, Nitta S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Sitar Z, Amano H Journal of Crystal Growth, 514, 13, 2019 |
| 8 |
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Yang X, Nitta S, Nagamatsu K, Bae SY, Lee HJ, Liu YH, Pristovsek M, Honda Y, Amano H Journal of Crystal Growth, 482, 1, 2018 |
| 9 |
MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire Dinh DV, Amano H, Pristovsek M Journal of Crystal Growth, 502, 14, 2018 |
| 10 |
High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M Journal of Crystal Growth, 498, 377, 2018 |