검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n plus poly gate Guegan G, Gwoziecki R, Touret P, Raynaud C, Pretet J, Gonnard O, Gouget G, Deleonibus S Solid-State Electronics, 53(7), 741, 2009 |
| 2 |
Coupling effects and channels separation in FinFETs Dauge F, Pretet J, Cristoloveanu S, Vandooren A, Mathew L, Jomaah J, Nguyen BY Solid-State Electronics, 48(4), 535, 2004 |
| 3 |
Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing Casse M, Pretet J, Cristoloveanu S, Poiroux T, Fenouillet-Beranger C, Fruleux F, Raynaud C, Reimbold G Solid-State Electronics, 48(7), 1243, 2004 |
| 4 |
Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs Pretet J, Ioannou D, Subba N, Cristoloveanu S, Maszara W, Raynaud C Solid-State Electronics, 46(11), 1699, 2002 |
| 5 |
From SOI materials to innovative devices Allibert F, Ernst T, Pretet J, Hefyene N, Perret C, Zaslavsky A, Cristoloveanu S Solid-State Electronics, 45(4), 559, 2001 |