화학공학소재연구정보센터
검색결과 : 24건
No. Article
1 Design rules for minimizing voltage losses in high-efficiency organic solar cells
Qian DP, Zheng ZL, Yao HF, Tress W, Hopper TR, Chen SL, Li SS, Liu J, Chen SS, Zhang JB, Liu XK, Gao BW, Ouyang LQ, Jin YZ, Pozina G, Buyanova IA, Chen WM, Inganas O, Coropceanu V, Bredas JL, Yan H, Hou JH, Zhang FL, Bakulin AA, Gao F
Nature Materials, 17(8), 703, 2018
2 Properties of GaN layers grown on N-face free-standing GaN substrates
Li X, Hemmingsson C, Forsberg U, Janzen E, Pozina G
Journal of Crystal Growth, 413, 81, 2015
3 Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
Hemmingsson C, Pozina G
Journal of Crystal Growth, 366, 61, 2013
4 Role of the host polymer matrix in light emission processes in nano-CdS/poly vinyl alcohol composite
Rudko GY, Kovalchuk AO, Fediv VI, Ren Q, Chen WM, Buyanova IA, Pozina G
Thin Solid Films, 543, 11, 2013
5 Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon
Metaferia W, Junesand C, Gau MH, Lo I, Pozina G, Hultman L, Lourdudoss S
Journal of Crystal Growth, 332(1), 27, 2011
6 Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
Hemmingsson C, Boota M, Rahmatalla RO, Junaid M, Pozina G, Birch J, Monemar B
Journal of Crystal Growth, 311(2), 292, 2009
7 Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
Hemmingsson C, Pozina G, Heuken M, Schineller B, Monemar B
Journal of Crystal Growth, 310(5), 906, 2008
8 Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
Hemmingsson C, Paskov PP, Pozina G, Heuken M, Schineller B, Monemar B
Journal of Crystal Growth, 300(1), 32, 2007
9 SiC crystal growth by HTCVD
Ellison A, Magnusson B, Sundqvist B, Pozina G, Bergman JP, Janzen E, Vehanen A
Materials Science Forum, 457-460, 9, 2004
10 Characterisation and defects in silicon carbide
Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E
Materials Science Forum, 389-3, 9, 2002