검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Gate-all-around technology: Taking advantage of ballistic transport? Huguenin JL, Bidal G, Denorme S, Fleury D, Loubet N, Pouydebasque A, Perreau P, Leverd F, Barnola S, Beneyton R, Orlando B, Gouraud P, Salvetat T, Clement L, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T Solid-State Electronics, 54(9), 883, 2010 |
| 2 |
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S Solid-State Electronics, 53(7), 723, 2009 |
| 3 |
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann JM, Roure MC, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S Solid-State Electronics, 52(9), 1285, 2008 |
| 4 |
High threshold voltage matching performance on gate-all-around MOSFET Cathignol A, Cros A, Harrison S, Cerrutti R, Coronel P, Pouydebasque A, Rochereau K, Skotnicki T, Ghibaudo G Solid-State Electronics, 51(11-12), 1450, 2007 |