검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Comparative measurements on atomic layer deposited Al2O3 thin films using ex situ table top and mapping ellipsometry, as well as X-ray and VUV reflectometry Petrik P, Gumprecht T, Nutsch A, Roeder G, Lemberger M, Juhasz G, Polgar O, Major C, Kozma P, Janosov M, Fodor B, Agocs E, Fried M Thin Solid Films, 541, 131, 2013 |
| 2 |
Expanded beam (macro-imaging) ellipsometry Fried M, Juhasz G, Major C, Petrik P, Polgar O, Horvath Z, Nutsch A Thin Solid Films, 519(9), 2730, 2011 |
| 3 |
Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometry Petrik P, Zolnai Z, Polgar O, Fried M, Betyak Z, Agocs E, Lohner T, Werner C, Roppischer M, Cobet C Thin Solid Films, 519(9), 2791, 2011 |
| 4 |
Evaluation strategies for multi-layer, multi-material ellipsometric measurements Polgar O, Petrik R, Lohner T, Fried M Applied Surface Science, 253(1), 57, 2006 |
| 5 |
Ellipsometric characterization of nanocrystals in porous silicon Petrik P, Fried M, Vazsonyi E, Lohner T, Horvath E, Polgar O, Basa P, Barsony I, Gyulai J Applied Surface Science, 253(1), 200, 2006 |
| 6 |
Evaluation of ellipsometric measurements using complex strategies Polgar O, Fried M, Lohner T, Barsony I Thin Solid Films, 455-56, 95, 2004 |
| 7 |
Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry Petrik P, Shaaban ER, Lohner T, Battistig G, Fried M, Lopez JG, Morilla Y, Polgar O, Gyulai J Thin Solid Films, 455-56, 239, 2004 |
| 8 |
Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry Petrik P, Cayrel F, Fried M, Polgar O, Lohner I, Vincent L, Alquier D, Gyulai J Thin Solid Films, 455-56, 344, 2004 |
| 9 |
Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry Fried A, Petrik P, Lohner T, Khanh NQ, Polgar O, Gyulai J Thin Solid Films, 455-56, 404, 2004 |
| 10 |
Characterization of thin porous silicon films formed on n(+)/p silicon junctions by spectroscopic ellipsometry Strehlke S, Bastide S, Polgar O, Fried M, Levy-Clement Journal of the Electrochemical Society, 147(2), 636, 2000 |