| 1 |
Anion Binding by Dimetallic Nickel(II) and Nickel(III) Complexes of a Face-to-Face Bicyclam: Looking for a Bimacrocyclic Effect
Boiocchi M, Fabbrizzi L, Fusco N, Invernici M, Licchelli M, Poggi A
Inorganic Chemistry, 55(6), 2946, 2016 |
| 2 |
Oxo-Anion Recognition by Mono- and Bisurea Pendant-Arm Macrocyclic Complexes
Boiocchi M, Licchelli M, Milani M, Poggi A, Sacchi D
Inorganic Chemistry, 54(1), 47, 2015 |
| 3 |
Copper(II) Complexes of Cyclams Containing Nitrophenyl Substituents: Push-Pull Behavior and Scorpionate Coordination of the Nitro Group
Boiocchi M, Ciarrocchi C, Fabbrizzi L, Licchelli M, Mangano C, Poggi A, Lopez MV
Inorganic Chemistry, 54(21), 10197, 2015 |
| 4 |
Energy deprivation dynamics and regulatory reforms in Europe: Evidence from household panel data
Poggi A, Florio M
Energy Policy, 38(1), 253, 2010 |
| 5 |
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature
Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R
Materials Science Forum, 483, 625, 2005 |
| 6 |
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature
Canino M, Castaldini A, Cavallini A, Moscatelli F, Nipoti R, Poggi A
Materials Science Forum, 483, 649, 2005 |
| 7 |
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC
Poggi A, Parisini A, Solmi S, Nipoti R
Materials Science Forum, 483, 665, 2005 |
| 8 |
Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer
Moscatelli F, Scorzoni A, Poggi A, Canino M, Nipoti R
Materials Science Forum, 483, 737, 2005 |
| 9 |
Measurements of charge collection efficiency of p(+)/n junction SiC detectors
Moscatelli F, Scorzoni A, Poggi A, Bruzzi M, Lagomarsino S, Mersi S, Sciortino S, Lazar M, Di Placido A, Nipoti R
Materials Science Forum, 483, 1021, 2005 |
| 10 |
Structural characterization of alloyed Al/Ti and Ti contacts on SiC
Parisini A, Poggi A, Nipoti R
Materials Science Forum, 457-460, 837, 2004 |
