검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G Solid-State Electronics, 125, 118, 2016 |
| 2 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 3 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 4 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |
| 5 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 6 |
Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges Kuzmik J, Bychikhin S, Lossy R, Wuerfl HJ, Poisson MAD, Teyssier JP, Gaquiere C, Pogany D Solid-State Electronics, 51(6), 969, 2007 |
| 7 |
Thermally-driven motion of current filaments in ESD protection devices Pogany D, Bychikhin S, Denison M, Rodin P, Jensen N, Groos G, Stecher M, Gornik E Solid-State Electronics, 49(3), 421, 2005 |
| 8 |
Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes Kuzmik J, Pogany D, Gornik E, Javorka P, Kordos P Solid-State Electronics, 48(2), 271, 2004 |