검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy Ploch S, Wernicke T, Thalmair J, Lohr M, Pristovsek M, Zweck J, Weyers M, Kneissl M Journal of Crystal Growth, 356, 70, 2012 |
| 2 |
Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Ploch S, Park JB, Stellmach J, Schwaner T, Frentrup M, Niermann T, Wernicke T, Pristovsek M, Lehmann M, Kneissl M Journal of Crystal Growth, 331(1), 25, 2011 |
| 3 |
Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy Ploch S, Frentrup M, Wernicke T, Pristovsek M, Weyers M, Kneissl M Journal of Crystal Growth, 312(15), 2171, 2010 |
| 4 |
Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy Meissner C, Ploch S, Leyer M, Pristovsek M, Kneissl M Journal of Crystal Growth, 310(23), 4959, 2008 |