화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Strained-silicon on silicon and strained-silicon on silicon-germanium on silicon by relaxed buffer bonding
Isaacson DM, Taraschi G, Pitera AJ, Ariel N, Langdo TA, Fitzgerald EA
Journal of the Electrochemical Society, 153(2), G134, 2006
2 Ultrathin strained Si-on-insulator and SiGe-on-insulator created using low temperature wafer bonding and metastable stop layers
Taraschi G, Pitera AJ, McGill LM, Cheng ZY, Lee MJL, Langdo TA, Fitzgerald EA
Journal of the Electrochemical Society, 151(1), G47, 2004
3 Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substrates
Pitera AJ, Taraschi G, Lee ML, Leitz CW, Cheng ZY, Fitzgerald EA
Journal of the Electrochemical Society, 151(7), G443, 2004
4 Growth of strained Si and strained Ge heterostructures on relaxed Si1-xGex by ultrahigh vacuum chemical vapor deposition
Lee ML, Pitera AJ, Fitzgerald EA
Journal of Vacuum Science & Technology B, 22(1), 158, 2004
5 Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
Taraschi G, Pitera AJ, Fitzgerald EA
Solid-State Electronics, 48(8), 1297, 2004
6 The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 degrees C
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Tung CH
Thin Solid Films, 462-63, 151, 2004
7 Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1-x buffer layers
Groenert ME, Pitera AJ, Ram RJ, Fitzgerald EA
Journal of Vacuum Science & Technology B, 21(3), 1064, 2003