검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 2 |
INTEGRATED CIRCUITS Memory grows up Pirovano A, Schuegraf K Nature Nanotechnology, 5(3), 177, 2010 |
| 3 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F, Bez R Solid-State Electronics, 52(4), 584, 2008 |
| 4 |
Phase-change memory technology with self-aligned mu Trench cell architecture for 90 nm node and beyond Pirovano A, Pellizzer F, Tortorelli I, Rigano A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G, Bez R Solid-State Electronics, 52(9), 1467, 2008 |
| 5 |
Organic electrically bistable materials for non-volatile memory applications Pirovano A, Sotgiu R, Conoci S, Petralia S, Buonocore F Solid-State Electronics, 49(11), 1820, 2005 |
| 6 |
Switching and programming dynamics in phase-change memory cells Ielmini D, Mantegazza D, Lacaita AL, Pirovano A, Pellizzer F Solid-State Electronics, 49(11), 1826, 2005 |