화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process
Pons M, Su J, Chubarov M, Boichot R, Mercier F, Blanquet E, Giusti G, Pique D
Journal of Crystal Growth, 468, 235, 2017
2 Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process
Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M
Journal of Crystal Growth, 335(1), 17, 2011
3 Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD
Claudel A, Blanquet E, Chaussende D, Boichot R, Martin R, Mank H, Crisci A, Doisneau B, Chaudouet P, Coindeau S, Pique D, Pons M
Journal of the Electrochemical Society, 158(3), H328, 2011
4 Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD
Claudel A, Blanquet E, Chaussende D, Audier M, Pique D, Pons M
Journal of Crystal Growth, 311(13), 3371, 2009
5 Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
Van Elshocht S, Caymax M, De Gendt S, Conard T, Petry J, Date L, Pique D, Heyns MM
Journal of the Electrochemical Society, 151(4), F77, 2004
6 Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications
Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M
Journal of the Electrochemical Society, 151(10), F228, 2004