화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry
Balmer RS, Pickering C, Pidduck AJ, Martin T
Journal of Crystal Growth, 245(3-4), 198, 2002
2 In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs
Balmer RS, Pickering C, Kier AM, Birbeck JCH, Saker M, Martin T
Journal of Crystal Growth, 230(3-4), 361, 2001
3 In situ optical monitoring for SiGe epitaxy
Robbins DJ, Pickering C, Russell J, Carline RT, Dann AW, Marrs AD, Glasper JL
Journal of Crystal Growth, 209(2-3), 290, 2000
4 Characterization of oxide layers on GaAs substrates
Allwood DA, Carline RT, Mason NJ, Pickering C, Tanner BK, Walker PJ
Thin Solid Films, 364(1-2), 33, 2000
5 Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures
Pickering C
Thin Solid Films, 313-314, 406, 1998
6 Evaluation of automated spectroscopic ellipsometry for in-line process control - ESPRIT semiconductor equipment assessment (SEA) project 'IMPROVE'
Pickering C, Russell J, Nayar V, Imschweiler J, Wille H, Harrington S, Wiggins C, Stehle JL, Piel JP, Bruchez J
Thin Solid Films, 313-314, 446, 1998
7 Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors
Carline RT, Russell J, Hosea TJC, Thomas PJS, Pickering C
Thin Solid Films, 313-314, 579, 1998
8 Real-Time Control of Layer Thickness in LPCVD Si/Si.Ge-88.(12) HBT Structures
Hope DA, Pickering C, Carline RT, Leong WY, Robbins DJ
Thin Solid Films, 294(1-2), 18, 1997
9 Real-Time Spectroscopic Ellipsometry Monitoring of Si1-xGex/Si Epitaxial-Growth
Pickering C, Hope DA, Carline RT, Robbins DJ
Journal of Vacuum Science & Technology A, 13(3), 740, 1995
10 Luminescent Anodized Silicon Aerocrystal Networks Prepared by Supercritical Drying
Canham LT, Cullis AG, Pickering C, Dosser OD, Cox TI, Lynch TP
Nature, 368(6467), 133, 1994