검색결과 : 10건
No. | Article |
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1 |
Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry Balmer RS, Pickering C, Pidduck AJ, Martin T Journal of Crystal Growth, 245(3-4), 198, 2002 |
2 |
In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs Balmer RS, Pickering C, Kier AM, Birbeck JCH, Saker M, Martin T Journal of Crystal Growth, 230(3-4), 361, 2001 |
3 |
In situ optical monitoring for SiGe epitaxy Robbins DJ, Pickering C, Russell J, Carline RT, Dann AW, Marrs AD, Glasper JL Journal of Crystal Growth, 209(2-3), 290, 2000 |
4 |
Characterization of oxide layers on GaAs substrates Allwood DA, Carline RT, Mason NJ, Pickering C, Tanner BK, Walker PJ Thin Solid Films, 364(1-2), 33, 2000 |
5 |
Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures Pickering C Thin Solid Films, 313-314, 406, 1998 |
6 |
Evaluation of automated spectroscopic ellipsometry for in-line process control - ESPRIT semiconductor equipment assessment (SEA) project 'IMPROVE' Pickering C, Russell J, Nayar V, Imschweiler J, Wille H, Harrington S, Wiggins C, Stehle JL, Piel JP, Bruchez J Thin Solid Films, 313-314, 446, 1998 |
7 |
Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors Carline RT, Russell J, Hosea TJC, Thomas PJS, Pickering C Thin Solid Films, 313-314, 579, 1998 |
8 |
Real-Time Control of Layer Thickness in LPCVD Si/Si.Ge-88.(12) HBT Structures Hope DA, Pickering C, Carline RT, Leong WY, Robbins DJ Thin Solid Films, 294(1-2), 18, 1997 |
9 |
Real-Time Spectroscopic Ellipsometry Monitoring of Si1-xGex/Si Epitaxial-Growth Pickering C, Hope DA, Carline RT, Robbins DJ Journal of Vacuum Science & Technology A, 13(3), 740, 1995 |
10 |
Luminescent Anodized Silicon Aerocrystal Networks Prepared by Supercritical Drying Canham LT, Cullis AG, Pickering C, Dosser OD, Cox TI, Lynch TP Nature, 368(6467), 133, 1994 |