검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass Park CH, Pan H, Ishikawa Y, Wada K, Ahn D Thin Solid Films, 662, 1, 2018 |
| 2 |
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells Stuckelberger J, Nogay G, Wyss P, Jeangros Q, Allebe C, Debrot F, Niquille X, Ledinsky M, Fejfar A, Despeisse M, Haug FJ, Loper P, Ballif C Solar Energy Materials and Solar Cells, 158, 2, 2016 |
| 3 |
N+ emitters realized using Ammonium Dihydrogen Phosphate for silicon solar cells Tang YH, Zhou CL, Wang WJ, Zhao Y, Zhou S, Fei JM, Cao HB Solar Energy, 95, 265, 2013 |
| 4 |
Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure Huang YJ, Liu CC, Lo KY, Chu SY Applied Surface Science, 257(7), 2494, 2011 |