화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Elevated source drain devices using silicon selective epitaxial growth
Samavedam SB, Dip A, Phillips AM, Tobin PJ, Mihopolous T, Taylor WJ, Adetutu O
Journal of Vacuum Science & Technology B, 18(3), 1244, 2000
2 Relaxation of strained Si layers grown on SiGe buffers
Samavedam SB, Taylor WJ, Grant JM, Smith JA, Tobin PJ, Dip A, Phillips AM, Liu R
Journal of Vacuum Science & Technology B, 17(4), 1424, 1999