검색결과 : 7건
No. | Article |
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1 |
In situ studies of the nucleation mechanisms of tris(cyclopentadienyl)cerium as cerium dopant source in SrS : Ce thin films for electroluminescent displays Lau JE, Peterson GG, Endisch D, Barth K, Topol A, Kaloyeros AE, Tuenge RT, King CN Journal of the Electrochemical Society, 148(6), C427, 2001 |
2 |
Metallorganic chemical vapor deposition of SrS : Ce for thin film electroluminescent device applications Barth KW, Lau JE, Peterson GG, Endisch D, Kaloyeros AE, Tuenge RT, King CN Journal of the Electrochemical Society, 147(6), 2174, 2000 |
3 |
Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition - Diffusion barrier properties in copper metallization Kaloyeros AE, Chen XM, Stark T, Kumar K, Seo S, Peterson GG, Frisch HL, Arkles B, Sullivan J Journal of the Electrochemical Society, 146(1), 170, 1999 |
4 |
In situ pulsed deposition studies of Ce(tmhd)(4) on SrS surfaces for thin film electroluminescent flat panel display applications (vol 145, pg 4271, 1998) Lau JE, Barth KW, Peterson GG, Endisch D, Topol A, Kaloyeros AE Journal of the Electrochemical Society, 146(3), 1243, 1999 |
5 |
In situ pulsed deposition studies of Ce(tmhd)(4) on SrS surfaces for thin film electroluminescent flat panel display applications Lau JE, Barth KW, Peterson GG, Endisch D, Topol A, Kaloyeros AE, Tuenge RT, Delarosa M, King CN Journal of the Electrochemical Society, 145(12), 4271, 1998 |
6 |
Integrated Plasma-Promoted Chemical-Vapor-Deposition Route to Aluminum Interconnect and Plug Technologies for Emerging Computer Chip Metallization Faltermeier J, Knorr A, Talevi R, Gundlach H, Kumar KA, Peterson GG, Kaloyeros AE, Sullivan JJ, Loan J Journal of Vacuum Science & Technology B, 15(5), 1758, 1997 |
7 |
Chemical-Vapor-Deposition of Copper from Cu-I Hexafluoroacetylacetonate Trimethylvinylsilane for Ultralarge Scale Integration Applications Braeckelmann G, Manger D, Burke A, Peterson GG, Kaloyeros AE, Reidsema C, Omstead TR, Loan JF, Sullivan JJ Journal of Vacuum Science & Technology B, 14(3), 1828, 1996 |