검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Material engineering of GexTe100-x compounds to improve phase-change memory performances Navarro G, Sousa V, Persico A, Pashkov N, Toffoli A, Bastien JC, Perniola L, Maitrejean S, Roule A, Zuliani P, Annunziata R, De Salvo B Solid-State Electronics, 89, 93, 2013 |
| 2 |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B Solid-State Electronics, 58(1), 62, 2011 |
| 3 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |