검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective Navas J, Araujo D, Piner JC, Sanchez-Coronilla A, Blanco E, Villar P, Alcantara R, Montserrat J, Florentin M, Eon D, Pernot J Applied Surface Science, 433, 408, 2018 |
| 2 |
Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS Canas J, Pinero JC, Lloret F, Gutierrez M, Pham T, Pernot J, Araujo D Applied Surface Science, 461, 93, 2018 |
| 3 |
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality Pinero JC, Araujo D, Fiori A, Traore A, Villar MP, Eon D, Muret P, Pernot J, Teraji T Applied Surface Science, 395, 200, 2017 |
| 4 |
Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC Pernot J, Contreras S, Camassel J, Robert JL Materials Science Forum, 483, 401, 2005 |
| 5 |
Electrical transport properties of n-type 4H and 6H silicon carbide Contreras S, Pernot J Materials Science Forum, 457-460, 555, 2004 |
| 6 |
Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers Juillaguet S, Balloud C, Pernot J, Sartel C, Souliere V, Camassel J, Monteil Y Materials Science Forum, 457-460, 577, 2004 |
| 7 |
Temperature-dependence of zone-center phonon modes in 4H-SiC Blanc C, Pernot J, Camassel J Materials Science Forum, 457-460, 649, 2004 |
| 8 |
Temperature-dependent Hall effect measurements in low-compensated p-type 4H-SiC Kasamakova-Kolaklieva L, Storasta L, Ivanov IG, Magnusson B, Contreras S, Consejo C, Pernot J, Zielinski M, Janzen E Materials Science Forum, 457-460, 677, 2004 |
| 9 |
Infrared investigation of implantation damage in 6H-SiC Camassel J, Wang HY, Pernot J, Godignon P, Mestres N, Pascual J Materials Science Forum, 389-3, 859, 2002 |
| 10 |
4H-SiC material for Hall effect and high-temperature sensors working in harsh environments Robert JL, Contreras S, Camassel J, Pernot J, Juillaguet S, Di Cioccio L, Billon T Materials Science Forum, 389-3, 1435, 2002 |