검색결과 : 58건
| No. | Article |
|---|---|
| 1 |
2 MeV ion irradiation effects on AlGaN/GaN HFET devices Sonia G, Richtera E, Brunner F, Denker A, Lossy R, Mai M, Lenk F, Bundesmann J, Pensl G, Schmidt J, Zeimer U, Wang L, Baskar K, Weyers M, Wurfl J, Trankle G Solid-State Electronics, 52(7), 1011, 2008 |
| 2 |
Growth of cubic SiC single crystals by the physical vapor transport technique Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP Journal of Crystal Growth, 308(2), 241, 2007 |
| 3 |
PVT-growth and characterization of single crystalline 3C-SiC on a (0001) 6H-SiC substrate Polychroniadis E, Mantzari A, Freudenberg A, Wollweber J, Nitschke R, Frank T, Pensl G, Schoner A Materials Science Forum, 483, 319, 2005 |
| 4 |
Comparison of electrically and optically determined minority carrier lifetimes in 6H-SiC Reshanov SA, Pensl G Materials Science Forum, 483, 417, 2005 |
| 5 |
Hall effect in the channel of 3C-SiC MOSFETs Krieger M, Pensl G, Bakowski M, Schoner A, Nagasawa H, Abe M Materials Science Forum, 483, 441, 2005 |
| 6 |
Concentration of N and P in SIC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS) Acarturk T, Semmelroth K, Pensl G, Saddow SE, Starke U Materials Science Forum, 483, 453, 2005 |
| 7 |
Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G Materials Science Forum, 483, 493, 2005 |
| 8 |
ALD deposited Al(2)O3 films on 6H-SiC(0001) after annealing in hydrogen atmosphere Gao KY, Seyller B, Emtsev K, Ley L, Ciobanu F, Pensl G Materials Science Forum, 483, 559, 2005 |
| 9 |
SiC/SiO2 interface states: Properties and models Afanas'ev VV, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A Materials Science Forum, 483, 563, 2005 |
| 10 |
Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC Schmid F, Frank T, Pensl G Materials Science Forum, 483, 641, 2005 |