검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate Bessolov VN, Karpov DV, Konenkova EV, Lipovskii AA, Osipov AV, Redkov AV, Soshnikov IP, Kukushkin SA Thin Solid Films, 606, 74, 2016 |
| 2 |
Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN Ali M, Romanov AE, Suihkonen S, Svensk O, Sintonen S, Sopanen M, Lipsanen H, Nevedomsky VN, Bert NA, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 344(1), 59, 2012 |
| 3 |
Void shape control in GaN re-grown on hexagonally patterned mask-less GaN Ali M, Romanov AE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE Journal of Crystal Growth, 315(1), 188, 2011 |
| 4 |
TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers Liliental-Weber Z Journal of Crystal Growth, 310(17), 4011, 2008 |
| 5 |
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Bishop SM, Park JS, Gu J, Wagner BP, Reltmeier ZJ, Batchelor DA, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 300(1), 83, 2007 |
| 6 |
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Wagner BP, Reitmeier ZJ, Park JS, Bachelor D, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 290(2), 504, 2006 |
| 7 |
Control of pendeo epitaxial growth of 3C-SiC on silicon substrate Okui Y, Jacob C, Ohshima S, Nishino S Materials Science Forum, 433-4, 209, 2002 |
| 8 |
Laterally overgrown structures as substrates for lattice mismatched epitaxy Zytkiewicz ZR Thin Solid Films, 412(1-2), 64, 2002 |
| 9 |
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures Zheleva TS, Nam OH, Ashmawi WM, Griffin JD, Davis RF Journal of Crystal Growth, 222(4), 706, 2001 |
| 10 |
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Davis RF, Nam OH, Zheleva TS, Gehrke T, Linthicum KJ, Rajagopal P Materials Science Forum, 338-3, 1471, 2000 |