검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Chemical Bath Deposition of ZnO Nanowires Using Copper Nitrate as an Additive for Compensating Doping Lausecker C, Salem B, Baillin X, Chaix-Pluchery O, Roussel H, Labau S, Pelissier B, Appert E, Consonni V Inorganic Chemistry, 60(3), 1612, 2021 |
| 2 |
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V Piallat F, Beugin V, Gassilloud R, Dussault L, Pelissier B, Leroux C, Caubet P, Vallee C Applied Surface Science, 303, 388, 2014 |
| 3 |
Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties Gourvest E, Pelissier B, Vallee C, Roule A, Lhostis S, Maitrejean S Journal of the Electrochemical Society, 159(4), H373, 2012 |
| 4 |
Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application Jorel C, Vallee C, Gourvest E, Pelissier B, Kahn M, Bonvalot M, Gonon P Journal of Vacuum Science & Technology B, 27(1), 378, 2009 |
| 5 |
Double-anchoring fluorinated molecules for antiadhesion mold treatment in UV nanoimprint lithography Zelsmann M, Truffier-Boutry D, Francone A, Alleaume C, Kurt I, Beaurain A, Pelissier B, Pepin-Donat B, Lombard C, Boussey J Journal of Vacuum Science & Technology B, 27(6), 2873, 2009 |
| 6 |
Preparation and Characterization of Silver Substrates Coated with Antimony-Doped SnO2 Thin Films for Surface Plasmon Resonance Studies Manesse M, Sanjines R, Stambouli V, Jorel C, Pelissier B, Pisarek M, Boukherroub R, Szunerits S Langmuir, 25(14), 8036, 2009 |
| 7 |
Improved release strategy for UV nanoimprint lithography Garidel S, Zelsmann M, Chaix N, Voisin P, Boussey J, Beaurain A, Pelissier B Journal of Vacuum Science & Technology B, 25(6), 2430, 2007 |
| 8 |
Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processes Le Gouil A, Pargon E, Cunge G, Joubert O, Pelissier B Journal of Vacuum Science & Technology B, 24(5), 2191, 2006 |
| 9 |
Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes Joubert O, Cunge G, Pelissier B, Vallier L, Kogelschatz M, Pargon E Journal of Vacuum Science & Technology A, 22(3), 553, 2004 |
| 10 |
SiC single crystal growth by sublimation: Experimental and numerical results Moulin C, Pons M, Pisch A, Grosse P, Faure C, Basset A, Basset G, Passero A, Billon T, Pelissier B, Anikin M, Pernot E, Pernot-Rejmankova P, Madar R Materials Science Forum, 353-356, 7, 2001 |