검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates Pei CW, Heroux JB, Wang WI Journal of Vacuum Science & Technology B, 22(3), 1460, 2004 |
| 2 |
Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering Heroux JB, Pei CW, Wang WI Journal of Vacuum Science & Technology B, 22(4), 2240, 2004 |
| 3 |
High quality GaAs grown on Si-on-insulator compliant substrates Pei CW, Heroux JB, Sweet J, Wang WI, Chen J, Chang MF Journal of Vacuum Science & Technology B, 20(3), 1196, 2002 |
| 4 |
GaN grown by molecular beam epitaxy with antimony as surfactant Pei CW, Turk B, Heroux JB, Wang WI Journal of Vacuum Science & Technology B, 19(4), 1426, 2001 |
| 5 |
Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy Jiang ZM, Pei CW, Liao LS, Zhou XF, Zhang XJ, Wang X, Jia QJ, Jiang XM, Ma ZH, Smith TR, Sou IK Thin Solid Films, 336(1-2), 236, 1998 |