| 1 |
AFM characterization of patterned sapphire substrate with dense cone arrays: Image artifacts and tip-cone convolution effect
Shen J, Zhang D, Zhang FH, Gan Y
Applied Surface Science, 433, 358, 2018 |
| 2 |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
Ke WC, Chiang CY, Son WD, Lee FW
Applied Surface Science, 456, 967, 2018 |
| 3 |
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
Lee WJ, Park MS, Lee WJ, Choi YJ, Lee HY
Journal of Crystal Growth, 493, 8, 2018 |
| 4 |
Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate
Kim DS, Jeong WS, Ko H, Lee JS, Byun D
Thin Solid Films, 641, 2, 2017 |
| 5 |
Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
Lee FW, Ke WC, Cheng CH, Liao BW, Chen WK
Applied Surface Science, 375, 223, 2016 |
| 6 |
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
Shang L, Zhai GM, Mei FH, Jia W, Yu CY, Liu XG, Xu BS
Journal of Crystal Growth, 442, 89, 2016 |
| 7 |
Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer
Zhou SJ, Yuan S, Liu YC, Guo LJ, Liu S, Ding H
Applied Surface Science, 355, 1013, 2015 |
| 8 |
Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching
Yang DC, Liang HW, Qiu Y, Shen RS, Liu Y, Xia XC, Song SW, Zhang KX, Yu ZN, Zhang YT, Du GT
Applied Surface Science, 295, 26, 2014 |
| 9 |
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
Zhang YH, Wei TB, Wang JX, Fan C, Chen Y, Hu Q, Li JM
Journal of Crystal Growth, 394, 7, 2014 |
| 10 |
Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate
Jang J, Lee K, Hwang J, Jung J, Lee S, Lee K, Kong B, Cho H, Nam O
Journal of Crystal Growth, 361, 166, 2012 |
