검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy Rojas-Ramirez JS, Wang S, Contreras-Guerrero R, Caro M, Bhatnagar K, Holland M, Oxland R, Doornbos G, Passlack M, Diaz CH, Droopad R Journal of Crystal Growth, 425, 33, 2015 |
| 2 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures Ramvall P, Wang CH, Astromskas G, Vellianitis G, Holland M, Droopad R, Samuelson L, Wernersson LE, Passlack M, Diaz CH Journal of Crystal Growth, 374, 43, 2013 |
| 3 |
Growth of heterostructures on InAs for high mobility device applications Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R Journal of Crystal Growth, 378, 117, 2013 |
| 4 |
High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates Vellianitis G, van Dal MJH, Duriez B, Lee TL, Passlack M, Wann CH, Diaz CH Journal of Crystal Growth, 383, 9, 2013 |
| 5 |
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy Priyantha W, Radhakrishnan G, Droopad R, Passlack M Journal of Crystal Growth, 323(1), 103, 2011 |
| 6 |
Development of GaAs-based MOSFET using molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Adams L, England N, Uebelhoer D, Fejes P, Zurcher P, Passlack M Journal of Crystal Growth, 301, 139, 2007 |
| 7 |
Gate dielectric on compound semiconductors by molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Passlack M Journal of Vacuum Science & Technology B, 24(3), 1479, 2006 |
| 8 |
In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm(2)/Vs for use in high-kappa dielectric NMOSFETs Droopad R, Rajagopalan K, Abrokwah J, Canonico M, Passlack M Solid-State Electronics, 50(7-8), 1175, 2006 |
| 9 |
Development methodology for high-kappa gate dielectrics on III-V semiconductors: GdxGa0.4-xO0.6/Ga2O3 dielectric stacks on GaAs Passlack M Journal of Vacuum Science & Technology B, 23(4), 1773, 2005 |
| 10 |
The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2x8)/(2x4) Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M Journal of Chemical Physics, 120(12), 5745, 2004 |