화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
Spassov D, Skeparovski A, Paskaleva A, Novkovski N
Thin Solid Films, 614, 7, 2016
2 Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface
Hudec B, Paskaleva A, Jancovic P, Derer J, Fedor J, Rosova A, Dobrocka E, Frohlich K
Thin Solid Films, 563, 10, 2014
3 Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry
Karmakov Y, Paskaleva A
Applied Surface Science, 271, 12, 2013
4 Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry
Karmakov Y, Paskaleva A, Atanassova E
Applied Surface Science, 258(10), 4507, 2012
5 Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks
Paskaleva A, Tapajna M, Dobrocka E, Husekova K, Atanassova E, Frohlich K
Applied Surface Science, 257(17), 7876, 2011
6 Spectroscopic ellipsometry of very thin tantalum pentoxide on Si
Karmakov I, Konova A, Atanassova E, Paskaleva A
Applied Surface Science, 255(22), 9211, 2009
7 Effect of Ti doping on Ta2O5 stacks with Ru and Al gates
Paskaleva A, Tapajna M, Atanassova E, Frohlich K, Vincze A, Dobrocka E
Applied Surface Science, 254(18), 5879, 2008
8 Electrical characteristics of Ti-doped Ta2O5 stacked capacitors
Atanassova E, Spassov D, Paskaleva A, Georgieva M, Kopninarova J
Thin Solid Films, 516(23), 8684, 2008
9 Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon
Novkovski N, Atanassova E, Paskaleva A
Applied Surface Science, 253(9), 4396, 2007
10 Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si
Atanassova E, Spassov D, Paskaleva A, Kostov K
Applied Surface Science, 253(5), 2841, 2006