검색결과 : 14건
No. | Article |
---|---|
1 |
A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures Spassov D, Skeparovski A, Paskaleva A, Novkovski N Thin Solid Films, 614, 7, 2016 |
2 |
Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface Hudec B, Paskaleva A, Jancovic P, Derer J, Fedor J, Rosova A, Dobrocka E, Frohlich K Thin Solid Films, 563, 10, 2014 |
3 |
Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry Karmakov Y, Paskaleva A Applied Surface Science, 271, 12, 2013 |
4 |
Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry Karmakov Y, Paskaleva A, Atanassova E Applied Surface Science, 258(10), 4507, 2012 |
5 |
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks Paskaleva A, Tapajna M, Dobrocka E, Husekova K, Atanassova E, Frohlich K Applied Surface Science, 257(17), 7876, 2011 |
6 |
Spectroscopic ellipsometry of very thin tantalum pentoxide on Si Karmakov I, Konova A, Atanassova E, Paskaleva A Applied Surface Science, 255(22), 9211, 2009 |
7 |
Effect of Ti doping on Ta2O5 stacks with Ru and Al gates Paskaleva A, Tapajna M, Atanassova E, Frohlich K, Vincze A, Dobrocka E Applied Surface Science, 254(18), 5879, 2008 |
8 |
Electrical characteristics of Ti-doped Ta2O5 stacked capacitors Atanassova E, Spassov D, Paskaleva A, Georgieva M, Kopninarova J Thin Solid Films, 516(23), 8684, 2008 |
9 |
Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon Novkovski N, Atanassova E, Paskaleva A Applied Surface Science, 253(9), 4396, 2007 |
10 |
Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si Atanassova E, Spassov D, Paskaleva A, Kostov K Applied Surface Science, 253(5), 2841, 2006 |