화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Influence of plasma process on III-V/Ge multijunction solar cell via etching
de Lafontaine M, Pargon E, Petit-Etienne C, Gay G, Jaouad A, Gour MJ, Volatier M, Fafard S, Aimez V, Darnon M
Solar Energy Materials and Solar Cells, 195, 49, 2019
2 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Boulard F, Joubert O, Banna S, Lill T
Journal of Vacuum Science & Technology B, 28(5), 926, 2010
3 Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors
Pargon E, Martin M, Thiault J, Joubert O, Foucher J, Lill T
Journal of Vacuum Science & Technology B, 26(3), 1011, 2008
4 Tungsten metal gate etching in Cl-2/O-2 inductively coupled high density plasmas
Morel T, Bamola S, Ramos R, Beaurain A, Pargon E, Joubert O
Journal of Vacuum Science & Technology B, 26(6), 1875, 2008
5 Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas
Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T
Journal of Vacuum Science & Technology B, 25(5), 1640, 2007
6 Ar+ bombardment of 193 nm photoresist: Morphological effects
Pargon E, Nest D, Graves DB
Journal of Vacuum Science & Technology B, 25(4), 1236, 2007
7 Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processes
Le Gouil A, Pargon E, Cunge G, Joubert O, Pelissier B
Journal of Vacuum Science & Technology B, 24(5), 2191, 2006
8 Mass spectrometry studies of resist trimming processes in HBr/O-2 and Cl-2/O-2 chemistries
Pargon E, Joubert O, Chevolleau T, Cunge G, Xu SL, Lill T
Journal of Vacuum Science & Technology B, 23(1), 103, 2005
9 Towards a controlled patterning of 10 nm silicon gates in high density plasmas
Pargon E, Darnon M, Joubert O, Chevolleau T, Vallier L, Mollard L, Lill T
Journal of Vacuum Science & Technology B, 23(5), 1913, 2005
10 Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes
Joubert O, Cunge G, Pelissier B, Vallier L, Kogelschatz M, Pargon E
Journal of Vacuum Science & Technology A, 22(3), 553, 2004