검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates. Caliebe M, Tandukar S, Cheng ZZ, Hocker M, Han YS, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K, Scholz F Journal of Crystal Growth, 440, 69, 2016 |