화학공학소재연구정보센터
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No. Article
1 Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
Shuaib A, Levallois C, Gauthier JP, Paranthoen C, Durand O, Cornet C, Chevalier N, Le Corre A
Thin Solid Films, 519(18), 6178, 2011
2 Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mu m on InP(311)B substrates
Caroff P, Platz C, Dehaese O, Paranthoen C, Bertru N, Le Corre A, Loualiche S
Journal of Crystal Growth, 278(1-4), 329, 2005
3 Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 mu m quantum dot laser
Paranthoen C, Platz C, Moreau G, Bertru N, Dehaese O, Le Corre A, Miska P, Even J, Folliot H, Labbe C, Patriarche G, Simon JC, Loualiche S
Journal of Crystal Growth, 251(1-4), 230, 2003
4 Formation of InAs islands on InP(311)B surface by molecular beam epitaxy
Paranthoen C, Bertru N, Platz C, Caroff P, Dehaese O, Folliot H, Le Corre A, Loualiche S
Journal of Crystal Growth, 257(1-2), 104, 2003
5 Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates
Frechengues S, Bertru N, Drouot V, Paranthoen C, Dehaese O, Loualiche S, Le Corre A, Lambert B
Journal of Crystal Growth, 209(4), 661, 2000