검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells Ebert C, Pulwin Z, Byrnes D, Paranjpe A, Zhang W Journal of Crystal Growth, 315(1), 61, 2011 |
| 2 |
Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers Zhang XG, Soderman B, Armour E, Paranjpe A Journal of Crystal Growth, 318(1), 436, 2011 |
| 3 |
Atomic layer deposition of AlOx for thin film head gap applications Paranjpe A, Gopinath S, Omstead T, Bubber R Journal of the Electrochemical Society, 148(9), G465, 2001 |
| 4 |
Ultralarge scale integrated metallization and interconnects Whitman C, Moslehi MM, Paranjpe A, Velo L, Omstead T Journal of Vacuum Science & Technology A, 17(4), 1893, 1999 |
| 5 |
Barrier Properties of Titanium Nitride Films Grown by Low-Temperature Chemical-Vapor-Deposition from Titanium Tetraiodide Faltermeier C, Goldberg C, Jones M, Upham A, Manger D, Peterson G, Lau J, Kaloyeros AE, Arkles B, Paranjpe A Journal of the Electrochemical Society, 144(3), 1002, 1997 |
| 6 |
Chemical-Vapor-Deposition Tin Process for Contact via Barrier Applications Paranjpe A, Islamraja M Journal of Vacuum Science & Technology B, 13(5), 2105, 1995 |