검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems Goux L, Wang XP, Chen YY, Pantisano L, Jossart N, Govoreanu B, Kittl JA, Jurczak M, Altimime L, Wouters DJ Electrochemical and Solid State Letters, 14(6), H244, 2011 |
| 2 |
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems Goux L, Chen YY, Pantisano L, Wang XP, Groeseneken G, Jurczak M, Wouters DJ Electrochemical and Solid State Letters, 13(6), G54, 2010 |
| 3 |
Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni Goux L, Polspoel W, Lisoni JG, Chen YY, Pantisano L, Wang XP, Vandervorst W, Jurczak M, Wouters DJ Journal of the Electrochemical Society, 157(8), G187, 2010 |
| 4 |
Low-frequency (1/f) noise performance of n- and p-MOSFETs with poly-Si/Hf-based gate dielectrics Srinivasan P, Simoen E, Pantisano L, Claeys C, Misra D Journal of the Electrochemical Society, 153(4), G324, 2006 |
| 5 |
Effect of nitridation on low-frequency (1/f) noise in n- and p-MOSFETS with HFO2 gate dielectrics Srinivasan P, Simoen E, Rittersma ZM, Deweerd W, Pantisano L, Claeys C, Misra D Journal of the Electrochemical Society, 153(9), G819, 2006 |
| 6 |
Low-frequency noise performance of HfO2-based gate stacks Claeys C, Simoen E, Mercha A, Pantisano L, Young E Journal of the Electrochemical Society, 152(9), F115, 2005 |
| 7 |
Tunneling 1/f(gamma) noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs Simoen E, Mercha A, Pantisano L, Claeys C, Young E Solid-State Electronics, 49(5), 702, 2005 |