검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Digital and analog TFET circuits: Design and benchmark Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L Solid-State Electronics, 146, 50, 2018 |
| 2 |
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits Strangio S, Palestri P, Lanuzza M, Esseni D, Crupi F, Selmi L Solid-State Electronics, 128, 37, 2017 |
| 3 |
Selected papers from the EUROSOI-ULIS conference Gnani E, Palestri P Solid-State Electronics, 115, 65, 2016 |
| 4 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
| 5 |
The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L Solid-State Electronics, 108, 90, 2015 |
| 6 |
Two dimensional quantum mechanical simulation of low dimensional tunneling devices Alper C, Palestri P, Lattanzio L, Padilla JL, Ionescu AM Solid-State Electronics, 113, 167, 2015 |
| 7 |
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors Pittino F, Palestri P, Scarbolo P, Esseni D, Selmi L Solid-State Electronics, 98, 63, 2014 |
| 8 |
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model Gudmundsson V, Palestri P, Hellstrom PE, Selmi L, Ostling M Solid-State Electronics, 79, 172, 2013 |
| 9 |
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III-V channel materials Revelant A, Palestri P, Osgnach P, Semi L Solid-State Electronics, 88, 54, 2013 |
| 10 |
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model Bresciani M, Palestri P, Esseni D, Selmi L, Szafranek B, Neumaier D Solid-State Electronics, 89, 161, 2013 |