검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors Pesic M, Fengler FPG, Larcher L, Padovani A, Schenk T, Grimley ED, Sang XH, LeBeau JM, Slesazeck S, Schroeder U, Mikolajick T Advanced Functional Materials, 26(25), 4601, 2016 |
| 2 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory Puglisi FM, Larcher L, Padovani A, Pavan P Solid-State Electronics, 125, 204, 2016 |
| 3 |
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi FM, Pavan P, Larcher L, Padovani A Solid-State Electronics, 113, 132, 2015 |
| 4 |
A study on HfO2 RRAM in HRS based on I-V and RTN analysis Puglisi FM, Pavan P, Padovani A, Larcher L Solid-State Electronics, 102, 69, 2014 |
| 5 |
RTS noise characterization of HfOx RRAM in high resistive state Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G Solid-State Electronics, 84, 160, 2013 |
| 6 |
Grain boundary-driven leakage path formation in HfO2 dielectrics Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R Solid-State Electronics, 65-66, 146, 2011 |