검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Impact of thermal treatments on epitaxial GayIn1-y As1-x Bi (x) layers luminescent properties Stanionyte S, Pacebutas V, Cechavicius B, Bicunas A, Geizutis A, Bukauskas V, Butkute R, Krotkus A Journal of Materials Science, 53(11), 8339, 2018 |
| 2 |
Photoluminescence at up to 2.4 mu m wavelengths from GalnAsBi/AllnAs quantum wells Butkute R, Pacebutas V, Cechavicius B, Nedzinskas R, Selskis A, Arlauskas A, Krotkus A Journal of Crystal Growth, 391, 116, 2014 |
| 3 |
Growth and characterization of UTC photo-diodes containing GaAs1-xBix absorber layer Geizutis A, Pacebutas V, Butkute R, Svidovsky P, Strazdiene V, Krotkus A Solid-State Electronics, 99, 101, 2014 |
| 4 |
Photoluminescence investigation of GaAs1-xBix/GaAs heterostructures Pacebutas V, Butkute R, Cechavicius B, Kavaliauskas J, Krotkus A Thin Solid Films, 520(20), 6415, 2012 |
| 5 |
Morphology and photoluminescence of anodially grown porous layers on some Ga-V compounds Bendorius RA, Jasutis V, Kavaliauskas J, Pacebutas V, Sabataityte J, Simkiene I, Tvardauskas H, Baranov A Materials Science Forum, 384-3, 67, 2002 |
| 6 |
p-n junction formed in structures with macro-porous silicon Grigoras K, Jasutis V, Pacebutas V, Sabataityte J, Simkiene I Applied Surface Science, 166(1-4), 532, 2000 |
| 7 |
Enhanced Light-Absorption in Anodically Etched Silicon-Wafers Grigoras K, Krotkus A, Pacebutas V, Kavaliauskas J, Simkiene I Thin Solid Films, 276(1-2), 228, 1996 |