검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Beam E, Hobart KD, Feigelson BN Journal of Crystal Growth, 499, 35, 2018 |
| 2 |
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality Pinero JC, Araujo D, Fiori A, Traore A, Villar MP, Eon D, Muret P, Pernot J, Teraji T Applied Surface Science, 395, 200, 2017 |
| 3 |
A 60 GOPS/W,-1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology Rossi D, Pullini A, Loi I, Gautschi M, Gurkaynak FK, Bartolini A, Flatresse P, Benini L Solid-State Electronics, 117, 170, 2016 |
| 4 |
Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts Taube A, Kaczmarski J, Kruszka R, Grochowski J, Kosiel K, Golaszewska-Malec K, Sochacki M, Jung W, Kaminska E, Piotrowska A Solid-State Electronics, 111, 12, 2015 |
| 5 |
Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices Huang HL, Liang YC Solid-State Electronics, 114, 148, 2015 |
| 6 |
Recent advances on dielectrics technology for SiC and GaN power devices Roccaforte F, Fiorenza P, Greco G, Vivona M, Lo Nigro R, Giannazzo F, Patti A, Saggio M Applied Surface Science, 301, 9, 2014 |
| 7 |
Integration of supercapacitors with enzymatic biobatteries toward more effective pulse-powered use in small-scale energy harvesting devices Skunik-Nuckowska M, Grzejszczyk K, Stolarczyk K, Bilewicz R, Kulesza PJ Journal of Applied Electrochemistry, 44(4), 497, 2014 |
| 8 |
Considerations about the influence of the structural and electrochemical properties of carbonaceous materials on the behavior of lithium-ion capacitors Schroeder M, Menne S, Segalini J, Saurel D, Casas-Cabanas M, Passerini S, Winter M, Balducci A Journal of Power Sources, 266, 250, 2014 |
| 9 |
Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Niiyama Y, Li ZD, Chow TP, Li JA, Nomura T, Kato S Solid-State Electronics, 56(1), 73, 2011 |
| 10 |
250 degrees C operation normally-off GaN MOSFETs Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Yoshida S Solid-State Electronics, 51(5), 784, 2007 |