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High concentration phosphorus doping in Ge for CMOS-integrated laser applications
Park CH, Yako M, Wada K, Ishikawa Y, Ahn D
Solid-State Electronics, 154, 43, 2019 |
| 2 |
N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass
Park CH, Pan H, Ishikawa Y, Wada K, Ahn D
Thin Solid Films, 662, 1, 2018 |
| 3 |
Removal of lead ions from solution by phosphosilicate glass
Kim CY, Kim HJ, Nam JS
Journal of Hazardous Materials, 153(1-2), 173, 2008 |
| 4 |
Quantitative determination of dielectric thin-film properties on product wafers using infrared reflection-absorption spectroscopy
Niemczyk TM, Zhang LZ, Haaland DM, Radigan KJ
Journal of Vacuum Science & Technology A, 16(6), 3490, 1998 |
| 5 |
Testing of a Rapid Fault-Detection Model for Quality-Control - Borophosphosilicate Glass Thin-Films Monitored by Infrared-Absorption Spectroscopy
Zhang S, Franke JE, Niemczyk TM, Haaland DM, Cox JN, Banerjee I
Journal of Vacuum Science & Technology B, 15(4), 955, 1997 |
| 6 |
3-Dimensional Equipment Modeling for Chemical-Vapor-Deposition
Werner C, Ilg M, Uram K
Journal of Vacuum Science & Technology A, 14(3), 1147, 1996 |
| 7 |
Precise Property Determinations of Arsenosilicate Glass Thin-Films Using Infrared-Spectroscopy
Niemczyk TM, Wangmaneerat B, Haaland DM
Journal of Vacuum Science & Technology A, 12(3), 835, 1994 |
