검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Two-step degradation of a-InGaZnO thin film transistors under DC bias stress Hu CF, Teng T, Qu XP Solid-State Electronics, 152, 4, 2019 |
| 2 |
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F Solid-State Electronics, 132, 49, 2017 |
| 3 |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs Lin CY, Chang TC, Liu KJ, Tsai JY, Chen CE, Liu HW, Lu YH, Tseng TY, Cheng O, Huang CT Thin Solid Films, 620, 30, 2016 |
| 4 |
Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric Ma WCY, Huang CY Solid-State Electronics, 114, 115, 2015 |
| 5 |
Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric Cho M, Aoulaiche M, Degraeve R, Kaczer B, Kauerauf T, Ragnarsson LA, Adelmann C, Van Elshocht S, Hoffmann TY, Groeseneken G Solid-State Electronics, 63(1), 5, 2011 |
| 6 |
The influence of hafnium doping on bias stability in zinc oxide thin film transistors Kim WS, Moon YK, Kim KT, Shin SY, Ahn BD, Lee JH, Park JW Thin Solid Films, 519(15), 5161, 2011 |
| 7 |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology Weng WT, Lee YJ, Lin HC, Huang TY Solid-State Electronics, 54(4), 368, 2010 |