| 1 |
Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer
Jung JG, Lee K, Lee B, Lee HS
Solid-State Electronics, 148, 35, 2018 |
| 2 |
Identification of defects causing performance degradation of high temperature n-type Czochralski silicon bifacial solar cells
Gaspar G, Coletti G, Juel M, Wurzner S, Sondena R, Di Sabatino M, Arnberg L, Ovrelid EJ
Solar Energy Materials and Solar Cells, 153, 31, 2016 |
| 3 |
Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon
Wang B, Zhang XP, Ma XY, Yang DR
Journal of Crystal Growth, 318(1), 183, 2011 |
| 4 |
In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source
Grillenberger H, Knerer D, Magerl A
Journal of Crystal Growth, 318(1), 1075, 2011 |
| 5 |
Effect of oxygen precipitates on dislocation motion in Czochralski silicon
Zeng ZD, Ma XY, Chen JH, Yang DR, Ratschinski I, Hevroth F, Leipner HS
Journal of Crystal Growth, 312(2), 169, 2010 |
| 6 |
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
Chen JH, Ma XY, Yang DR
Thin Solid Films, 518(9), 2334, 2010 |
| 7 |
실리콘 Intrinsic Gettering 기술의 이해와 응용
최광수
Korean Journal of Materials Research, 14(1), 9, 2004 |
| 8 |
Oxygen and lattice distortions in multicrystalline silicon
Moller HJ, Funke C, Lawerenz A, Riedel S, Werner M
Solar Energy Materials and Solar Cells, 72(1-4), 403, 2002 |
| 9 |
Simulation of point defect distributions in silicon crystals during melt-growth
Nakamura K, Saishoji T, Tomioka J
Journal of Crystal Growth, 210(1-3), 49, 2000 |
| 10 |
Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers
Hwang DH, Lee BY, Yoo HD, Kwon OJ
Journal of Crystal Growth, 213(1-2), 57, 2000 |
