검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F Solid-State Electronics, 132, 49, 2017 |
| 2 |
Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I-V method Constant A, Godignon P Solid-State Electronics, 63(1), 70, 2011 |
| 3 |
Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation Sen B, Wong H, Yang BL, Chu PK, Kakushima K, Iwai H Solid-State Electronics, 53(3), 355, 2009 |
| 4 |
Interface characterization and current conduction in HfO2-gated MOS capacitors Chen HW, Chiu FC, Liu CH, Chen SY, Huang HS, Juan PC, Hwang L Applied Surface Science, 254(19), 6112, 2008 |
| 5 |
Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions Cordier C, Boukhenoufa A, Pichon L, Michaud JF Solid-State Electronics, 49(8), 1376, 2005 |
| 6 |
Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB Applied Surface Science, 220(1-4), 181, 2003 |
| 7 |
Origin of low frequency noise in polycrystalline silicon thin-film transistors Dimitriadis CA, Brini J, Kamarinos G Thin Solid Films, 427(1-2), 113, 2003 |
| 8 |
Optical 2nd-Harmonic Generation - A Probe of Atomic-Structure and Bonding at Si-SiO2 Interfaces, and Other Chemically-Modified Si Surfaces Emmerichs U, Meyer C, Bakker HJ, Wolter F, Kurz H, Lucovsky G, Bjorkman CE, Yasuda T, Ma Y, Jing Z, Whitten JL Journal of Vacuum Science & Technology B, 12(4), 2484, 1994 |