| 1 |
High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
Zhang Q, Xia GD, Li LB, Xia WW, Gong HY, Wang SM
Current Applied Physics, 19(2), 174, 2019 |
| 2 |
Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Lee BH, Lee DY, Lee JY, Park S, Kim S, Lee SY
Solid-State Electronics, 158, 59, 2019 |
| 3 |
Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method
Lee BH, Han S, Lee SY
Solid-State Electronics, 139, 15, 2018 |
| 4 |
The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistors
Du Ahn B, Lee KH, Park J, Park JS
Applied Surface Science, 355, 1267, 2015 |
| 5 |
Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers
Han DS, Park JH, Kang MS, Choi DK, Park JW
Current Applied Physics, 15(2), 94, 2015 |
| 6 |
Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
Jeon HJ, Lee SG, Kim H, Park JS
Applied Surface Science, 301, 358, 2014 |
| 7 |
UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors
Lim KH, Kim K, Kim S, Park SY, Kim H, Kim YS
Advanced Materials, 25(21), 2994, 2013 |
| 8 |
Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations
Ryu MK, Park SHK, Hwang CS, Yoon SM
Solid-State Electronics, 89, 171, 2013 |
| 9 |
First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
Chong E, Kang I, Park CH, Lee SY
Thin Solid Films, 534, 609, 2013 |
| 10 |
Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
Kim CE, Yun I
Thin Solid Films, 537, 275, 2013 |
