검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
4H-silicon carbide thin junction based ultraviolet photodetectors Biondo S, Lazar M, Ottaviani L, Vervisch W, Le Borgne V, El Khakani MA, Duchaine J, Milesi F, Palais O, Planson D Thin Solid Films, 522, 17, 2012 |
| 2 |
Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing Vervisch V, Etienne H, Torregrosa F, Roux L, Ottaviani L, Pasquinelli M, Sarnet T, Delaporte P Journal of Vacuum Science & Technology B, 26(1), 286, 2008 |
| 3 |
Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma Ottaviani L, Yakimov E, Hidalgo P, Martinuzzi S Materials Science Forum, 457-460, 509, 2004 |
| 4 |
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G Materials Science Forum, 389-3, 827, 2002 |
| 5 |
Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Ottaviani L, Lazar M, Locatelli ML, Monteil Y, Heera V, Voelskow M, Skorupa W Applied Surface Science, 184(1-4), 330, 2001 |
| 6 |
Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP Applied Surface Science, 184(1-4), 477, 2001 |
| 7 |
High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Morvan E, Godignon P, Skorupa W, Chantel JP Materials Science Forum, 353-356, 571, 2001 |
| 8 |
Improved annealing process for 6H-SiC p(+)-n junction creation by Al implantation Lazar M, Ottaviani L, Locatelli ML, Planson D, Canut B, Chante JP Materials Science Forum, 338-3, 921, 2000 |
| 9 |
Effect of boron implantation on 6H-SiC N-MOSFET interface properties Godignon P, Jorda X, Vellvehi M, Berberich S, Montserrat J, Ottaviani L Materials Science Forum, 338-3, 1303, 2000 |
| 10 |
Study of the breakdown voltage of protected or non-protected 6H-SiC bipolar diodes by OBIC characterisation Isoird K, Ottaviani L, Locatelli ML, Planson D, Raynaud C, Bevilacqua P, Chante JP Materials Science Forum, 338-3, 1363, 2000 |