검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C Ostinelli O, Bolognesi CR Journal of Crystal Growth, 311(6), 1508, 2009 |
| 2 |
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs Zeng YP, Ostinelli O, Liu HG, Bolognesi CR Solid-State Electronics, 52(8), 1202, 2008 |
| 3 |
Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 mu m grown by MOVPE Ostinelli O, Haiml M, Grange R, Almuneau G, Ebnother M, Gini E, Muller E, Keller U, Bachtold W Journal of Crystal Growth, 286(2), 247, 2006 |