검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition Alema F, Ledyaev O, Miller R, Beletsky V, Osinsky A, Schoenfeld WV Journal of Crystal Growth, 435, 6, 2016 |
| 2 |
Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes Anderson TJ, Wang HT, Kang BS, Ren F, Pearton SJ, Osinsky A, Dabiran A, Chow PP Applied Surface Science, 255(5), 2524, 2008 |
| 3 |
Selective detection of Hg (II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP Electrochemical and Solid State Letters, 10(11), J150, 2007 |
| 4 |
Thermal stability of Ti/Al/Pt/Au and Ti/Au ohmic contacts on n-type ZnCdO Chen JJ, Jang S, Ren F, Rawal S, Li YJ, Kim HS, Norton DP, Pearton SJ, Osinsky A Applied Surface Science, 253(2), 746, 2006 |
| 5 |
Optical characterization of ZnMnO-based dilute magnetic semiconductor structures Buyanova IA, Chen WM, Ivill MP, Pate R, Norton DP, Pearton SJ, Dong JW, Osinsky A, Hertog B, Dabiran AM, Chow PP Journal of Vacuum Science & Technology B, 24(1), 259, 2006 |
| 6 |
Diffusion-controlled selective wet etching of ZnCdO over ZnO Chen JJ, Ren F, Norton DP, Pearton SJ, Osinsky A, Dong JW, Chu SNG Electrochemical and Solid State Letters, 8(12), G359, 2005 |
| 7 |
Design and simulation of ZnO-based light-emitting diode structures Han SY, Yang H, Norton DR, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Chow PP Journal of Vacuum Science & Technology B, 23(6), 2504, 2005 |
| 8 |
Electron trapping effects in C- and Fe-doped GaN and AlGaN Lopatiuk O, Osinsky A, Dabiran A, Gartsman K, Feldman I, Chernyak L Solid-State Electronics, 49(10), 1662, 2005 |
| 9 |
Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ Journal of Vacuum Science & Technology B, 22(2), 619, 2004 |
| 10 |
Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ Journal of Vacuum Science & Technology B, 22(6), 2635, 2004 |