화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy
Bui KM, Iwata JI, Kangawa Y, Shiraishi K, Shigeta Y, Oshiyama A
Journal of Crystal Growth, 507, 421, 2019
2 A Simple scheme for estimating the pK(a) values of 5-substituted uracils
Matsui T, Oshiyama A, Shigeta Y
Chemical Physics Letters, 502(4-6), 248, 2011
3 Energy Compensation Mechanism for Charge-Separated Protonation States in Aspartate-Histidine Amino Acid Residue Pairs
Kamiya K, Boero M, Shiraishi K, Oshiyama A, Shigeta Y
Journal of Physical Chemistry B, 114(19), 6567, 2010
4 First principles studies on In-related nitride semiconductors
Obata T, Iwata J, Shiraishi K, Oshiyama A
Journal of Crystal Growth, 311(10), 2772, 2009
5 Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons
Kamiya K, Yamamoto S, Shiraishi K, Oshiyama A
Journal of Physical Chemistry B, 113(19), 6866, 2009
6 Increased stability of C-60 encapsulated in double walled carbon nanotubes
Scipioni R, Oshiyama A, Ohno T
Chemical Physics Letters, 455(1-3), 88, 2008
7 Formation of titanium-carbide in a nanospace of C-78 fullerenes
Otani M, Okada S, Oshiyama A
Chemical Physics Letters, 438(4-6), 274, 2007
8 Possible mechanism of proton transfer through peptide groups in the H-pathway of the bovine cytochrome c oxidase
Kamiya K, Boero M, Tateno M, Shiraishi K, Oshiyama A
Journal of the American Chemical Society, 129(31), 9663, 2007
9 Enol-to-keto tautomerism of peptide groups
Kamiya K, Boero M, Shiraishi K, Oshiyama A
Journal of Physical Chemistry B, 110(9), 4443, 2006
10 Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion
Uematsu M, Kageshima H, Fukatsu S, Itoh KM, Shiraishl K, Otani M, Oshiyama A
Thin Solid Films, 508(1-2), 270, 2006