| 1 |
A novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations
Karabulut A, Sarilmaz A, Ozel F, Orak I, Sahinkaya MA
Current Applied Physics, 20(1), 58, 2020 |
| 2 |
Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
Orak I, Eren H, Biyikli N, Dana A
Applied Surface Science, 467, 715, 2019 |
| 3 |
The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes
Karabulut A, Orak I, Turut A
Solid-State Electronics, 144, 39, 2018 |
| 4 |
The structural analysis of MWCNT-SiO2 and electrical properties on device application
Kocyigit A, Orak I, Karteri I, Urus S
Current Applied Physics, 17(9), 1215, 2017 |
| 5 |
The electrical characterizations and illumination response of Co/N-type GaP junction device
Orak I, Ejderha K, Turut A
Current Applied Physics, 15(9), 1054, 2015 |
| 6 |
The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode
Orak I, Ejderha K, Sonmez E, Alanyalioglu M, Turut A
Materials Research Bulletin, 61, 463, 2015 |
