검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Effects of pn Doping in Thiophene/Phenylene Co-oligomers Thin Films Sasaki F, Kawaguchi Y, Mochizuki H, Haraichi S, Ishitsuka T, Ootsuka T, Tomie T, Watanabe S, Shimoi Y, Yamao T, Hotta S Molecular Crystals and Liquid Crystals, 620(1), 153, 2015 |
| 2 |
Development of split gliding arc for surface treatment of conductive material Shiki H, Motoki J, Ito Y, Takikawa H, Ootsuka T, Okawa T, Yamanaka S, Usuki E, Nishimura Y, Hishida S, Sakakibara T Thin Solid Films, 516(11), 3684, 2008 |
| 3 |
Effect of a Fe3Si buffer layer for the growth of semiconducting beta-FeSi2 thin film on stainless steel substrate Liu ZX, Osamura M, Ootsuka T, Kuroda R, Fukuzawa Y, Otogawa N, Nakayama Y, Makita Y, Tanoue H Journal of Crystal Growth, 307(1), 82, 2007 |
| 4 |
A thin-film solar cell of high-quality beta-FeSi2/Si heterojunction prepared by sputtering Liu ZX, Wang SN, Otogawa N, Suzuki Y, Osamura M, Fukuzawa Y, Ootsuka T, Nakayama Y, Tanoue H, Makita Y Solar Energy Materials and Solar Cells, 90(3), 276, 2006 |
| 5 |
Formation of beta-FeSi2 thin films on non-silicon substrates Liu ZX, Osamura M, Ootsuka T, Kuroda R, Makita Y, Tanoue H, Fukuzawa Y, Otogawa N, Nakayama Y Thin Solid Films, 515(4), 1532, 2006 |
| 6 |
Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of beta-FeSi2 optoelectronic devices Ootsuka T, Liu Z, Osamura M, Fukuzawa Y, Kuroda R, Suzuki Y, Otogawa N, Mise T, Wang SN, Hoshino Y, Nakayama Y, Tanoue H, Makita Y Thin Solid Films, 476(1), 30, 2005 |
| 7 |
Formation of thin beta-FeSi2 template layer for the epitaxial growth of thick film on Si(111) substrate Kuroda R, Liu ZX, Fukuzawa Y, Suzuki Y, Osamura M, Wang S, Otogawa N, Ootsuka T, Mise T, Hoshino Y, Nakayama Y, Tanoue H, Makita Y Thin Solid Films, 461(1), 34, 2004 |
| 8 |
Important research targets to be explored for beta-FeSi2 device making Makita Y, Nakayama Y, Fukuzawa Y, Wang SN, Otogawa N, Suzuki Y, Liu ZX, Osamura M, Ootsuka T, Mise T, Tanoue H Thin Solid Films, 461(1), 202, 2004 |
| 9 |
Semiconductor-metal phase transition of iron disilicide by laser annealing and its application to form device electrodes Otogawa N, Wang SN, Kihara S, Liu ZX, Fukuzawa Y, Suzuki Y, Osamura M, Ootsuka T, Mise T, Miyake K, Nakayama Y, Tanoue H, Makita Y Thin Solid Films, 461(1), 223, 2004 |