검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
Transformation of Battery to High Performance Pseudocapacitor by the Hybridization of W18O49 with RuO2 Nanostructures Lichchhavi, Lee H, Ohshita Y, Singh AK, Shirage PM Langmuir, 37(3), 1141, 2021 |
| 2 |
Effect of additives in electrode paste of p-type crystalline Si solar cells on potential-induced degradation Jonai S, Tanaka A, Muramatsu K, Saito G, Nakamura K, Ogura A, Ohshita Y, Masuda A Solar Energy, 188, 1292, 2019 |
| 3 |
Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells Song I, Lee H, Lee SW, Bae S, Hyun JY, Kang Y, Lee HS, Ohshita Y, Ogura A, Kim D Current Applied Physics, 18(11), 1268, 2018 |
| 4 |
N-H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy Elleuch O, Wang L, Lee KH, Ikeda K, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 468, 581, 2017 |
| 5 |
Role of H-2 supply for Sn incorporations in MOCVD Ge1-xSnx epitaxial growth Suda K, Sawamoto N, Machida H, Ishikawa M, Sudoh H, Ohshita Y, Hirosawa I, Ogura A Journal of Crystal Growth, 468, 605, 2017 |
| 6 |
Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE Wang L, Elleuch O, Shirahata Y, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 437, 6, 2016 |
| 7 |
In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE Sasaki T, Takahasi M, Suzuki H, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 425, 13, 2015 |
| 8 |
Double acceptor in p-type GaAsN grown by chemical beam epitaxy Elleuch O, Wang L, Lee KH, Ikeda K, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 432, 45, 2015 |
| 9 |
Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (vol 323, pg 13, 2011) Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 387, 124, 2014 |
| 10 |
Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy Bouzazi B, Kojima N, Ohshita Y, Yamaguchi M Current Applied Physics, 13(7), 1269, 2013 |